TPC8018-H(TE12LQM) - MOSFET N-CH 30V 18A SOP8 2-6J1B

Vervaardiger Deel nommer

TPC8018-H(TE12LQM)

Interne Deel nommer

AX-TPC8018-H(TE12LQM)

vervaardiger

Toshiba Semiconductor and Storage

Kort beskrywing

MOSFET N-CH 30V 18A SOP8 2-6J1B

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

6856 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het TPC8018-H(TE12LQM) in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir TPC8018-H(TE12LQM)

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : TPC8018-H(TE12LQM)

vervaardiger : Toshiba Semiconductor and Storage

beskrywing : MOSFET N-CH 30V 18A SOP8 2-6J1B

reeks : -

Deelstatus : Obsolete

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 30V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 18A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 4.6 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 2.3V @ 1mA

Heklading (Vg) (Maks) @ Vgs : 38nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 2265pF @ 10V

VOO-funksie : -

Kragdissipasie (maksimum) : 1W (Ta)

Werkstemperatuur : 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : 8-SOP (5.5x6.0)

Pakket / saak : 8-SOIC (0.173", 4.40mm Width)

gewig : -

toestand : Nuut en oorspronklik

dokumente vir TPC8018-H(TE12LQM)

Inligtingsblaaie : TPC8018-H(TE12LQM).pdf

Verwante produkte vir TPC8018-H(TE12LQM) Toshiba Semiconductor and Storage

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