RQ3E100MNTB1 - MOSFET N-CH 30V 10A HSMT8
Vervaardiger Deel nommer
Interne Deel nommer
AX-RQ3E100MNTB1
vervaardiger
Kort beskrywing
MOSFET N-CH 30V 10A HSMT8
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
1113340 Pieces
verwysingsprys
Ons prys
- (Kontak ons gerus vir 'n beter prys: [email protected])
- AX Semiconductor het RQ3E100MNTB1 in voorraad vir verkoop.
- Gestuur opsies en gestuur tyd:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betaal opsies:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasies vir RQ3E100MNTB1
gehalte waarborg :
365 dae waarborg
Stock Resource :
Franchise verspreider / Vervaardiger Direkte
Land van oorsprong :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer :
RQ3E100MNTB1
vervaardiger :
Rohm Semiconductor
beskrywing :
MOSFET N-CH 30V 10A HSMT8
reeks :
-
Deelstatus :
Not For New Designs
VOO-tipe :
N-Channel
tegnologie :
MOSFET (Metal Oxide)
Dreineer na die bronspanning (Vdss) :
30V
Stroom - Deurlopende dreinering (id) @ 25 ° C :
10A (Ta)
Aandrywing Spanning (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
12.3 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Heklading (Vg) (Maks) @ Vgs :
9.9nC @ 10V
Vgs (maksimum) :
±20V
Invoerkapasiteit (Ciss) (Max) @ Vds :
520pF @ 15V
VOO-funksie :
-
Kragdissipasie (maksimum) :
2W (Ta)
Werkstemperatuur :
150°C (TJ)
Monteringstipe :
Surface Mount
Verskaffer toestelpakket :
8-HSMT (3.2x3)
Pakket / saak :
8-PowerVDFN
gewig :
-
toestand :
Nuut en oorspronklik
dokumente vir RQ3E100MNTB1
Inligtingsblaaie :
RQ3E100MNTB1.pdf
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