SI8823EDB-T2-E1 - MOSFET P-CH 20V 2.7A 4-MICROFOOT

Vervaardiger Deel nommer
Interne Deel nommer
vervaardiger
Kort beskrywing
MOSFET P-CH 20V 2.7A 4-MICROFOOT
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
3839450 Pieces
verwysingsprys
USD 0.073074
Ons prys
- (Kontak ons ​​gerus vir 'n beter prys: [email protected])

AX Semiconductor het SI8823EDB-T2-E1 in voorraad vir verkoop.
Gestuur opsies en gestuur tyd:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betaal opsies:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasies vir SI8823EDB-T2-E1

gehalte waarborg : 365 dae waarborg
Stock Resource : Franchise verspreider / Vervaardiger Direkte
Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer : SI8823EDB-T2-E1
vervaardiger : Vishay Siliconix
beskrywing : MOSFET P-CH 20V 2.7A 4-MICROFOOT
reeks : TrenchFET® Gen III
Deelstatus : Active
VOO-tipe : P-Channel
tegnologie : MOSFET (Metal Oxide)
Dreineer na die bronspanning (Vdss) : 20V
Stroom - Deurlopende dreinering (id) @ 25 ° C : 2.7A (Tc)
Aandrywing Spanning (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, vgs : 95 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id : 800mV @ 250µA
Heklading (Vg) (Maks) @ Vgs : 10nC @ 4.5V
Vgs (maksimum) : ±8V
Invoerkapasiteit (Ciss) (Max) @ Vds : 580pF @ 10V
VOO-funksie : -
Kragdissipasie (maksimum) : 900mW (Tc)
Werkstemperatuur : -55°C ~ 150°C (TJ)
Monteringstipe : Surface Mount
Verskaffer toestelpakket : 4-MICRO FOOT® (0.8x0.8)
Pakket / saak : 4-XFBGA
gewig : -
toestand : Nuut en oorspronklik
Related Links : SI882 , SI8823E

dokumente vir SI8823EDB-T2-E1

Inligtingsblaaie : SI8823EDB-T2-E1.pdf

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