FDMS1D4N03S - MOSFET N-CH 30V 211A 8PQFN

Vervaardiger Deel nommer

FDMS1D4N03S

Interne Deel nommer

AX-FDMS1D4N03S

vervaardiger

ON Semiconductor

Kort beskrywing

MOSFET N-CH 30V 211A 8PQFN

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

470115 Pieces

verwysingsprys

~~USD 0.59679~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het FDMS1D4N03S in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir FDMS1D4N03S

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : FDMS1D4N03S

vervaardiger : ON Semiconductor

beskrywing : MOSFET N-CH 30V 211A 8PQFN

reeks : PowerTrench®, SyncFET™

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 30V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 211A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 1.09 mOhm @ 38A, 10V

Vgs (th) (Max) @ Id : 3V @ 1mA

Heklading (Vg) (Maks) @ Vgs : 65nC @ 4.5V

Vgs (maksimum) : ±16V

Invoerkapasiteit (Ciss) (Max) @ Vds : 10250pF @ 15V

VOO-funksie : Schottky Diode (Body)

Kragdissipasie (maksimum) : 74W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : 8-PQFN (5x6)

Pakket / saak : 8-PowerTDFN

gewig : -

toestand : Nuut en oorspronklik

dokumente vir FDMS1D4N03S

Inligtingsblaaie : FDMS1D4N03S.pdf

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