SI5915DC-T1-GE3 - MOSFET 2P-CH 8V 3.4A 1206-8
Vervaardiger Deel nommer
Interne Deel nommer
vervaardiger
Kort beskrywing
MOSFET 2P-CH 8V 3.4A 1206-8
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
27839 Pieces
verwysingsprys
Ons prys
- (Kontak ons gerus vir 'n beter prys: [email protected])
- AX Semiconductor het SI5915DC-T1-GE3 in voorraad vir verkoop.
- Gestuur opsies en gestuur tyd:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betaal opsies:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasies vir SI5915DC-T1-GE3
gehalte waarborg :
365 dae waarborg
Stock Resource :
Franchise verspreider / Vervaardiger Direkte
Land van oorsprong :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer :
SI5915DC-T1-GE3
vervaardiger :
Vishay Siliconix
beskrywing :
MOSFET 2P-CH 8V 3.4A 1206-8
reeks :
TrenchFET®
Deelstatus :
Obsolete
VOO-tipe :
2 P-Channel (Dual)
VOO-funksie :
Logic Level Gate
Dreineer na die bronspanning (Vdss) :
8V
Stroom - Deurlopende dreinering (id) @ 25 ° C :
3.4A
Rds On (Max) @ Id, vgs :
70 mOhm @ 3.4A, 4.5V
Vgs (th) (Max) @ Id :
450mV @ 250µA (Min)
Heklading (Vg) (Maks) @ Vgs :
9nC @ 4.5V
Invoerkapasiteit (Ciss) (Max) @ Vds :
-
Krag - Maks :
1.1W
Werkstemperatuur :
-55°C ~ 150°C (TJ)
Monteringstipe :
Surface Mount
Pakket / saak :
8-SMD, Flat Lead
Verskaffer toestelpakket :
1206-8 ChipFET™
gewig :
-
toestand :
Nuut en oorspronklik
dokumente vir SI5915DC-T1-GE3
Inligtingsblaaie :
SI5915DC-T1-GE3.pdf
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