IRFD123PBF - MOSFET N-CH 100V 1.3A 4-DIP

Vervaardiger Deel nommer

IRFD123PBF

Interne Deel nommer

AX-IRFD123PBF

vervaardiger

Vishay Siliconix

Kort beskrywing

MOSFET N-CH 100V 1.3A 4-DIP

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

759095 Pieces

verwysingsprys

~~USD 0.3696~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het IRFD123PBF in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir IRFD123PBF

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : IRFD123PBF

vervaardiger : Vishay Siliconix

beskrywing : MOSFET N-CH 100V 1.3A 4-DIP

reeks : -

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 100V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 1.3A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 270 mOhm @ 780mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 16nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 360pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 1.3W (Ta)

Werkstemperatuur : -55°C ~ 175°C (TJ)

Monteringstipe : Through Hole

Verskaffer toestelpakket : 4-DIP, Hexdip, HVMDIP

Pakket / saak : 4-DIP (0.300", 7.62mm)

gewig : -

toestand : Nuut en oorspronklik

dokumente vir IRFD123PBF

Inligtingsblaaie : IRFD123PBF.pdf

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