SI2311DS-T1-GE3 - MOSFET P-CH 8V 3A SOT23

Vervaardiger Deel nommer

SI2311DS-T1-GE3

Interne Deel nommer

AX-SI2311DS-T1-GE3

vervaardiger

Vishay Siliconix

Kort beskrywing

MOSFET P-CH 8V 3A SOT23

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

11240 Pieces

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AX Semiconductor het SI2311DS-T1-GE3 in voorraad vir verkoop.

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spesifikasies vir SI2311DS-T1-GE3

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : SI2311DS-T1-GE3

vervaardiger : Vishay Siliconix

beskrywing : MOSFET P-CH 8V 3A SOT23

reeks : TrenchFET®

Deelstatus : Obsolete

VOO-tipe : P-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 8V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 3A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, vgs : 45 mOhm @ 3.5A, 4.5V

Vgs (th) (Max) @ Id : 800mV @ 250µA

Heklading (Vg) (Maks) @ Vgs : 12nC @ 4.5V

Vgs (maksimum) : ±8V

Invoerkapasiteit (Ciss) (Max) @ Vds : 970pF @ 4V

VOO-funksie : -

Kragdissipasie (maksimum) : 710mW (Ta)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : SOT-23-3

Pakket / saak : TO-236-3, SC-59, SOT-23-3

gewig : -

toestand : Nuut en oorspronklik

dokumente vir SI2311DS-T1-GE3

Inligtingsblaaie : SI2311DS-T1-GE3.pdf

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