SIR662DP-T1-GE3 - MOSFET N-CH 60V 60A PPAK SO-8

Vervaardiger Deel nommer

SIR662DP-T1-GE3

Interne Deel nommer

AX-SIR662DP-T1-GE3

vervaardiger

Vishay Siliconix

Kort beskrywing

MOSFET N-CH 60V 60A PPAK SO-8

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

455270 Pieces

verwysingsprys

~~USD 0.616248~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het SIR662DP-T1-GE3 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir SIR662DP-T1-GE3

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : SIR662DP-T1-GE3

vervaardiger : Vishay Siliconix

beskrywing : MOSFET N-CH 60V 60A PPAK SO-8

reeks : TrenchFET®

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 60V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 60A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 2.7 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 96nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 4365pF @ 30V

VOO-funksie : -

Kragdissipasie (maksimum) : 6.25W (Ta), 104W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : PowerPAK® SO-8

Pakket / saak : PowerPAK® SO-8

gewig : -

toestand : Nuut en oorspronklik

dokumente vir SIR662DP-T1-GE3

Inligtingsblaaie : SIR662DP-T1-GE3.pdf

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