TPN1110ENH,L1Q - MOSFET N-CH 200V 7.2A 8TSON

Vervaardiger Deel nommer

TPN1110ENH,L1Q

Interne Deel nommer

AX-TPN1110ENH,L1Q

vervaardiger

Toshiba Semiconductor and Storage

Kort beskrywing

MOSFET N-CH 200V 7.2A 8TSON

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

755665 Pieces

verwysingsprys

~~USD 0.37128~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het TPN1110ENH,L1Q in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir TPN1110ENH,L1Q

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : TPN1110ENH,L1Q

vervaardiger : Toshiba Semiconductor and Storage

beskrywing : MOSFET N-CH 200V 7.2A 8TSON

reeks : U-MOSVIII-H

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 200V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 7.2A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 114 mOhm @ 3.6A, 10V

Vgs (th) (Max) @ Id : 4V @ 200µA

Heklading (Vg) (Maks) @ Vgs : 7nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 600pF @ 100V

VOO-funksie : -

Kragdissipasie (maksimum) : 700mW (Ta), 39W (Tc)

Werkstemperatuur : 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : 8-TSON Advance (3.3x3.3)

Pakket / saak : 8-PowerVDFN

gewig : -

toestand : Nuut en oorspronklik

dokumente vir TPN1110ENH,L1Q

Inligtingsblaaie : TPN1110ENH,L1Q.pdf

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