EDB1316BDBH-1DAAT-F-R TR - IC DRAM 1G PARALLEL 134VFBGA

Vervaardiger Deel nommer

EDB1316BDBH-1DAAT-F-R TR

Interne Deel nommer

AX-EDB1316BDBH-1DAAT-F-R TR

vervaardiger

Micron Technology Inc.

Kort beskrywing

IC DRAM 1G PARALLEL 134VFBGA

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

70040 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het EDB1316BDBH-1DAAT-F-R TR in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir EDB1316BDBH-1DAAT-F-R TR

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : EDB1316BDBH-1DAAT-F-R TR

vervaardiger : Micron Technology Inc.

beskrywing : IC DRAM 1G PARALLEL 134VFBGA

reeks : -

Deelstatus : Active

Geheue tipe : Volatile

Geheue-formaat : DRAM

tegnologie : SDRAM - Mobile LPDDR2

Geheue grootte : 1Gb (64M x 16)

Klokfrekwensie : 533MHz

Skryf siklus tyd - Woord, bladsy : -

Toegangstyd : -

Geheue-koppelvlak : Parallel

Spanning - Toevoer : 1.14V ~ 1.95V

Werkstemperatuur : -40°C ~ 105°C (TC)

Monteringstipe : Surface Mount

Pakket / saak : 134-VFBGA

Verskaffer toestelpakket : 134-VFBGA (10x11.5)

gewig : -

toestand : Nuut en oorspronklik

dokumente vir EDB1316BDBH-1DAAT-F-R TR

Inligtingsblaaie : EDB1316BDBH-1DAAT-F-R TR.pdf

Verwante produkte vir EDB1316BDBH-1DAAT-F-R TR Micron Technology Inc.

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WF110250WJ50238BJ1	Vishay Beyschlag	CAP CER 5000PF 14KV SCREW.
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CDR31BP100BJZRAB	Vishay Vitramon	CAP CER 10PF 100V BP 0805.
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