TSM80N1R2CI C0G - MOSFET N-CH 800V 5.5A ITO220

Vervaardiger Deel nommer

TSM80N1R2CI C0G

Interne Deel nommer

AX-TSM80N1R2CI C0G

vervaardiger

Taiwan Semiconductor Corporation

Kort beskrywing

MOSFET N-CH 800V 5.5A ITO220

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

228090 Pieces

verwysingsprys

~~USD 1.23~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het TSM80N1R2CI C0G in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir TSM80N1R2CI C0G

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : TSM80N1R2CI C0G

vervaardiger : Taiwan Semiconductor Corporation

beskrywing : MOSFET N-CH 800V 5.5A ITO220

reeks : -

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 800V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 5.5A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 1.2 Ohm @ 1.8A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 19.4nC @ 10V

Vgs (maksimum) : ±30V

Invoerkapasiteit (Ciss) (Max) @ Vds : 685pF @ 100V

VOO-funksie : -

Kragdissipasie (maksimum) : 25W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Through Hole

Verskaffer toestelpakket : ITO-220AB

Pakket / saak : TO-220-3 Full Pack, Isolated Tab

gewig : -

toestand : Nuut en oorspronklik

dokumente vir TSM80N1R2CI C0G

Inligtingsblaaie : TSM80N1R2CI C0G.pdf

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