IPB123N10N3GATMA1 - MOSFET N-CH 100V 58A TO263-3

Vervaardiger Deel nommer

IPB123N10N3GATMA1

Interne Deel nommer

AX-IPB123N10N3GATMA1

vervaardiger

Infineon Technologies

Kort beskrywing

MOSFET N-CH 100V 58A TO263-3

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

522300 Pieces

verwysingsprys

~~USD 0.537162~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het IPB123N10N3GATMA1 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir IPB123N10N3GATMA1

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : IPB123N10N3GATMA1

vervaardiger : Infineon Technologies

beskrywing : MOSFET N-CH 100V 58A TO263-3

reeks : OptiMOS™

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 100V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 58A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, vgs : 12.3 mOhm @ 46A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 46µA

Heklading (Vg) (Maks) @ Vgs : 35nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 2500pF @ 50V

VOO-funksie : -

Kragdissipasie (maksimum) : 94W (Tc)

Werkstemperatuur : -55°C ~ 175°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : D²PAK (TO-263AB)

Pakket / saak : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

gewig : -

toestand : Nuut en oorspronklik

dokumente vir IPB123N10N3GATMA1

Inligtingsblaaie : IPB123N10N3GATMA1.pdf

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