SIHD6N65ET5-GE3 - MOSFET N-CH 650V 7A TO252AA

Vervaardiger Deel nommer
Interne Deel nommer
vervaardiger
Kort beskrywing
MOSFET N-CH 650V 7A TO252AA
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
605550 Pieces
verwysingsprys
USD 0.46332
Ons prys
- (Kontak ons ​​gerus vir 'n beter prys: [email protected])

AX Semiconductor het SIHD6N65ET5-GE3 in voorraad vir verkoop.
Gestuur opsies en gestuur tyd:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betaal opsies:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasies vir SIHD6N65ET5-GE3

gehalte waarborg : 365 dae waarborg
Stock Resource : Franchise verspreider / Vervaardiger Direkte
Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer : SIHD6N65ET5-GE3
vervaardiger : Vishay Siliconix
beskrywing : MOSFET N-CH 650V 7A TO252AA
reeks : E
Deelstatus : Active
VOO-tipe : N-Channel
tegnologie : MOSFET (Metal Oxide)
Dreineer na die bronspanning (Vdss) : 650V
Stroom - Deurlopende dreinering (id) @ 25 ° C : 7A (Tc)
Aandrywing Spanning (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, vgs : 600 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Heklading (Vg) (Maks) @ Vgs : 48nC @ 10V
Vgs (maksimum) : ±30V
Invoerkapasiteit (Ciss) (Max) @ Vds : 820pF @ 100V
VOO-funksie : -
Kragdissipasie (maksimum) : 78W (Tc)
Werkstemperatuur : -55°C ~ 150°C (TJ)
Monteringstipe : Surface Mount
Verskaffer toestelpakket : TO-252AA
Pakket / saak : TO-252-3, DPak (2 Leads + Tab), SC-63
gewig : -
toestand : Nuut en oorspronklik
Related Links : SIHD6 , SIHD6N6

dokumente vir SIHD6N65ET5-GE3

Inligtingsblaaie : SIHD6N65ET5-GE3.pdf

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