IPD082N10N3GBTMA1 - MOSFET N-CH 100V 80A TO252-3
Vervaardiger Deel nommer
Interne Deel nommer
vervaardiger
Kort beskrywing
MOSFET N-CH 100V 80A TO252-3
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
8304 Pieces
verwysingsprys
Ons prys
- (Kontak ons gerus vir 'n beter prys: [email protected])
- AX Semiconductor het IPD082N10N3GBTMA1 in voorraad vir verkoop.
- Gestuur opsies en gestuur tyd:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betaal opsies:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasies vir IPD082N10N3GBTMA1
gehalte waarborg :
365 dae waarborg
Stock Resource :
Franchise verspreider / Vervaardiger Direkte
Land van oorsprong :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer :
IPD082N10N3GBTMA1
vervaardiger :
Infineon Technologies
beskrywing :
MOSFET N-CH 100V 80A TO252-3
reeks :
OptiMOS™
Deelstatus :
Obsolete
VOO-tipe :
N-Channel
tegnologie :
MOSFET (Metal Oxide)
Dreineer na die bronspanning (Vdss) :
100V
Stroom - Deurlopende dreinering (id) @ 25 ° C :
80A (Tc)
Aandrywing Spanning (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
8.2 mOhm @ 73A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 75µA
Heklading (Vg) (Maks) @ Vgs :
55nC @ 10V
Vgs (maksimum) :
±20V
Invoerkapasiteit (Ciss) (Max) @ Vds :
3980pF @ 50V
VOO-funksie :
-
Kragdissipasie (maksimum) :
125W (Tc)
Werkstemperatuur :
-55°C ~ 175°C (TJ)
Monteringstipe :
Surface Mount
Verskaffer toestelpakket :
PG-TO252-3
Pakket / saak :
TO-252-3, DPak (2 Leads + Tab), SC-63
gewig :
-
toestand :
Nuut en oorspronklik
dokumente vir IPD082N10N3GBTMA1
Inligtingsblaaie :
IPD082N10N3GBTMA1.pdf
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