SI1922EDH-T1-GE3 - MOSFET 2N-CH 20V 1.3A SOT-363

Vervaardiger Deel nommer
Interne Deel nommer
vervaardiger
Kort beskrywing
MOSFET 2N-CH 20V 1.3A SOT-363
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
2878465 Pieces
verwysingsprys
USD 0.09747
Ons prys
- (Kontak ons ​​gerus vir 'n beter prys: [email protected])

AX Semiconductor het SI1922EDH-T1-GE3 in voorraad vir verkoop.
Gestuur opsies en gestuur tyd:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betaal opsies:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
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spesifikasies vir SI1922EDH-T1-GE3

gehalte waarborg : 365 dae waarborg
Stock Resource : Franchise verspreider / Vervaardiger Direkte
Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer : SI1922EDH-T1-GE3
vervaardiger : Vishay Siliconix
beskrywing : MOSFET 2N-CH 20V 1.3A SOT-363
reeks : TrenchFET®
Deelstatus : Active
VOO-tipe : 2 N-Channel (Dual)
VOO-funksie : Logic Level Gate
Dreineer na die bronspanning (Vdss) : 20V
Stroom - Deurlopende dreinering (id) @ 25 ° C : 1.3A
Rds On (Max) @ Id, vgs : 198 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Heklading (Vg) (Maks) @ Vgs : 2.5nC @ 8V
Invoerkapasiteit (Ciss) (Max) @ Vds : -
Krag - Maks : 1.25W
Werkstemperatuur : -55°C ~ 150°C (TJ)
Monteringstipe : Surface Mount
Pakket / saak : 6-TSSOP, SC-88, SOT-363
Verskaffer toestelpakket : SC-70-6 (SOT-363)
gewig : -
toestand : Nuut en oorspronklik
Related Links : SI192 , SI1922ED

dokumente vir SI1922EDH-T1-GE3

Inligtingsblaaie : SI1922EDH-T1-GE3.pdf

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