SIDR622DP-T1-GE3 - MOSFET N-CHAN 150V

Vervaardiger Deel nommer
Interne Deel nommer
vervaardiger
Kort beskrywing
MOSFET N-CHAN 150V
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
319510 Pieces
verwysingsprys
USD 0.878082
Ons prys
- (Kontak ons ​​gerus vir 'n beter prys: [email protected])

AX Semiconductor het SIDR622DP-T1-GE3 in voorraad vir verkoop.
Gestuur opsies en gestuur tyd:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betaal opsies:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasies vir SIDR622DP-T1-GE3

gehalte waarborg : 365 dae waarborg
Stock Resource : Franchise verspreider / Vervaardiger Direkte
Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer : SIDR622DP-T1-GE3
vervaardiger : Vishay Siliconix
beskrywing : MOSFET N-CHAN 150V
reeks : TrenchFET®
Deelstatus : Active
VOO-tipe : N-Channel
tegnologie : MOSFET (Metal Oxide)
Dreineer na die bronspanning (Vdss) : 150V
Stroom - Deurlopende dreinering (id) @ 25 ° C : 64.6A (Ta), 56.7A (Tc)
Aandrywing Spanning (Max Rds On, Min Rds On) : 7.5V, 10V
Rds On (Max) @ Id, vgs : 17.7 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Heklading (Vg) (Maks) @ Vgs : 41nC @ 10V
Vgs (maksimum) : ±20V
Invoerkapasiteit (Ciss) (Max) @ Vds : 1516pF @ 75V
VOO-funksie : -
Kragdissipasie (maksimum) : 6.25W (Ta), 125W (Tc)
Werkstemperatuur : -55°C ~ 150°C (TJ)
Monteringstipe : Surface Mount
Verskaffer toestelpakket : PowerPAK® SO-8DC
Pakket / saak : PowerPAK® SO-8
gewig : -
toestand : Nuut en oorspronklik
Related Links : SIDR6 , SIDR622D

dokumente vir SIDR622DP-T1-GE3

Inligtingsblaaie : SIDR622DP-T1-GE3.pdf

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