BSZ086P03NS3EGATMA1 - MOSFET P-CH 30V 40A TSDSON-8

Vervaardiger Deel nommer

BSZ086P03NS3EGATMA1

Interne Deel nommer

AX-BSZ086P03NS3EGATMA1

vervaardiger

Infineon Technologies

Kort beskrywing

MOSFET P-CH 30V 40A TSDSON-8

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

1399470 Pieces

verwysingsprys

~~USD 0.200478~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het BSZ086P03NS3EGATMA1 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir BSZ086P03NS3EGATMA1

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : BSZ086P03NS3EGATMA1

vervaardiger : Infineon Technologies

beskrywing : MOSFET P-CH 30V 40A TSDSON-8

reeks : OptiMOS™

Deelstatus : Active

VOO-tipe : P-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 30V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 13.5A (Ta), 40A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, vgs : 8.6 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 3.1V @ 105µA

Heklading (Vg) (Maks) @ Vgs : 57.5nC @ 10V

Vgs (maksimum) : ±25V

Invoerkapasiteit (Ciss) (Max) @ Vds : 4785pF @ 15V

VOO-funksie : -

Kragdissipasie (maksimum) : 2.1W (Ta), 69W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : PG-TSDSON-8

Pakket / saak : 8-PowerTDFN

gewig : -

toestand : Nuut en oorspronklik

dokumente vir BSZ086P03NS3EGATMA1

Inligtingsblaaie : BSZ086P03NS3EGATMA1.pdf

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