DMN10H099SFG-7 - MOSFET N-CH 100V 4.2A PWRDI3333

Vervaardiger Deel nommer

DMN10H099SFG-7

Interne Deel nommer

AX-DMN10H099SFG-7

vervaardiger

Diodes Incorporated

Kort beskrywing

MOSFET N-CH 100V 4.2A PWRDI3333

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

1578790 Pieces

verwysingsprys

~~USD 0.177708~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het DMN10H099SFG-7 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir DMN10H099SFG-7

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : DMN10H099SFG-7

vervaardiger : Diodes Incorporated

beskrywing : MOSFET N-CH 100V 4.2A PWRDI3333

reeks : -

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 100V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 4.2A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, vgs : 80 mOhm @ 3.3A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 25.2nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 1172pF @ 50V

VOO-funksie : -

Kragdissipasie (maksimum) : 980mW (Ta)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : PowerDI3333-8

Pakket / saak : 8-PowerWDFN

gewig : -

toestand : Nuut en oorspronklik

dokumente vir DMN10H099SFG-7

Inligtingsblaaie : DMN10H099SFG-7.pdf

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