SI5511DC-T1-GE3 - MOSFET N/P-CH 30V 4A 1206-8

Vervaardiger Deel nommer
Interne Deel nommer
vervaardiger
Kort beskrywing
MOSFET N/P-CH 30V 4A 1206-8
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
29071 Pieces
verwysingsprys
USD 0
Ons prys
- (Kontak ons ​​gerus vir 'n beter prys: [email protected])

AX Semiconductor het SI5511DC-T1-GE3 in voorraad vir verkoop.
Gestuur opsies en gestuur tyd:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betaal opsies:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasies vir SI5511DC-T1-GE3

gehalte waarborg : 365 dae waarborg
Stock Resource : Franchise verspreider / Vervaardiger Direkte
Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer : SI5511DC-T1-GE3
vervaardiger : Vishay Siliconix
beskrywing : MOSFET N/P-CH 30V 4A 1206-8
reeks : TrenchFET®
Deelstatus : Obsolete
VOO-tipe : N and P-Channel
VOO-funksie : Logic Level Gate
Dreineer na die bronspanning (Vdss) : 30V
Stroom - Deurlopende dreinering (id) @ 25 ° C : 4A, 3.6A
Rds On (Max) @ Id, vgs : 55 mOhm @ 4.8A, 4.5V
Vgs (th) (Max) @ Id : 2V @ 250µA
Heklading (Vg) (Maks) @ Vgs : 7.1nC @ 5V
Invoerkapasiteit (Ciss) (Max) @ Vds : 435pF @ 15V
Krag - Maks : 3.1W, 2.6W
Werkstemperatuur : -55°C ~ 150°C (TJ)
Monteringstipe : Surface Mount
Pakket / saak : 8-SMD, Flat Lead
Verskaffer toestelpakket : 1206-8 ChipFET™
gewig : -
toestand : Nuut en oorspronklik
Related Links : SI551 , SI5511D

dokumente vir SI5511DC-T1-GE3

Inligtingsblaaie : SI5511DC-T1-GE3.pdf

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