SIR414DP-T1-GE3 - MOSFET N-CH 40V 50A PPAK SO-8

Vervaardiger Deel nommer
Interne Deel nommer
vervaardiger
Kort beskrywing
MOSFET N-CH 40V 50A PPAK SO-8
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
561935 Pieces
verwysingsprys
USD 0.499278
Ons prys
- (Kontak ons ​​gerus vir 'n beter prys: [email protected])

AX Semiconductor het SIR414DP-T1-GE3 in voorraad vir verkoop.
Gestuur opsies en gestuur tyd:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betaal opsies:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasies vir SIR414DP-T1-GE3

gehalte waarborg : 365 dae waarborg
Stock Resource : Franchise verspreider / Vervaardiger Direkte
Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer : SIR414DP-T1-GE3
vervaardiger : Vishay Siliconix
beskrywing : MOSFET N-CH 40V 50A PPAK SO-8
reeks : TrenchFET®
Deelstatus : Active
VOO-tipe : N-Channel
tegnologie : MOSFET (Metal Oxide)
Dreineer na die bronspanning (Vdss) : 40V
Stroom - Deurlopende dreinering (id) @ 25 ° C : 50A (Tc)
Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, vgs : 2.8 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Heklading (Vg) (Maks) @ Vgs : 117nC @ 10V
Vgs (maksimum) : ±20V
Invoerkapasiteit (Ciss) (Max) @ Vds : 4750pF @ 20V
VOO-funksie : -
Kragdissipasie (maksimum) : 5.4W (Ta), 83W (Tc)
Werkstemperatuur : -55°C ~ 150°C (TJ)
Monteringstipe : Surface Mount
Verskaffer toestelpakket : PowerPAK® SO-8
Pakket / saak : PowerPAK® SO-8
gewig : -
toestand : Nuut en oorspronklik
Related Links : SIR41 , SIR414D

dokumente vir SIR414DP-T1-GE3

Inligtingsblaaie : SIR414DP-T1-GE3.pdf

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