FDFMA3N109 - MOSFET N-CH 30V 2.9A MICRO2X2

Vervaardiger Deel nommer

FDFMA3N109

Interne Deel nommer

AX-FDFMA3N109

vervaardiger

ON Semiconductor

Kort beskrywing

MOSFET N-CH 30V 2.9A MICRO2X2

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

1482160 Pieces

verwysingsprys

~~USD 0.189294~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het FDFMA3N109 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir FDFMA3N109

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : FDFMA3N109

vervaardiger : ON Semiconductor

beskrywing : MOSFET N-CH 30V 2.9A MICRO2X2

reeks : PowerTrench®

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 30V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 2.9A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, vgs : 123 mOhm @ 2.9A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 3nC @ 4.5V

Vgs (maksimum) : ±12V

Invoerkapasiteit (Ciss) (Max) @ Vds : 220pF @ 15V

VOO-funksie : Schottky Diode (Isolated)

Kragdissipasie (maksimum) : 1.5W (Ta)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : 6-MicroFET (2x2)

Pakket / saak : 6-VDFN Exposed Pad

gewig : -

toestand : Nuut en oorspronklik

dokumente vir FDFMA3N109

Inligtingsblaaie : FDFMA3N109.pdf

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