NDD03N80Z-1G - MOSFET N-CH 800V 2.9A IPAK
Vervaardiger Deel nommer
Interne Deel nommer
AX-NDD03N80Z-1G
vervaardiger
Kort beskrywing
MOSFET N-CH 800V 2.9A IPAK
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
21816 Pieces
verwysingsprys
Ons prys
- (Kontak ons gerus vir 'n beter prys: [email protected])
- AX Semiconductor het NDD03N80Z-1G in voorraad vir verkoop.
- Gestuur opsies en gestuur tyd:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betaal opsies:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasies vir NDD03N80Z-1G
gehalte waarborg :
365 dae waarborg
Stock Resource :
Franchise verspreider / Vervaardiger Direkte
Land van oorsprong :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer :
NDD03N80Z-1G
vervaardiger :
ON Semiconductor
beskrywing :
MOSFET N-CH 800V 2.9A IPAK
reeks :
-
Deelstatus :
Obsolete
VOO-tipe :
N-Channel
tegnologie :
MOSFET (Metal Oxide)
Dreineer na die bronspanning (Vdss) :
800V
Stroom - Deurlopende dreinering (id) @ 25 ° C :
2.9A (Tc)
Aandrywing Spanning (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
4.5 Ohm @ 1.2A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 50µA
Heklading (Vg) (Maks) @ Vgs :
17nC @ 10V
Vgs (maksimum) :
±30V
Invoerkapasiteit (Ciss) (Max) @ Vds :
440pF @ 25V
VOO-funksie :
-
Kragdissipasie (maksimum) :
96W (Tc)
Werkstemperatuur :
-55°C ~ 150°C (TJ)
Monteringstipe :
Through Hole
Verskaffer toestelpakket :
I-PAK
Pakket / saak :
TO-251-3 Short Leads, IPak, TO-251AA
gewig :
-
toestand :
Nuut en oorspronklik
dokumente vir NDD03N80Z-1G
Inligtingsblaaie :
NDD03N80Z-1G.pdf
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