PHM25NQ10T,518 - MOSFET N-CH 100V 30.7A 8HVSON

Vervaardiger Deel nommer

PHM25NQ10T,518

Interne Deel nommer

AX-PHM25NQ10T,518

vervaardiger

NXP USA Inc.

Kort beskrywing

MOSFET N-CH 100V 30.7A 8HVSON

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

53196 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het PHM25NQ10T,518 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir PHM25NQ10T,518

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : PHM25NQ10T,518

vervaardiger : NXP USA Inc.

beskrywing : MOSFET N-CH 100V 30.7A 8HVSON

reeks : TrenchMOS™

Deelstatus : Obsolete

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 100V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 30.7A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 30 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Heklading (Vg) (Maks) @ Vgs : 26.6nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 1800pF @ 20V

VOO-funksie : -

Kragdissipasie (maksimum) : 62.5W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : 8-HVSON (6x5)

Pakket / saak : 8-VDFN Exposed Pad

gewig : -

toestand : Nuut en oorspronklik

dokumente vir PHM25NQ10T,518

Inligtingsblaaie : PHM25NQ10T,518.pdf

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