SI7911DN-T1-GE3 - MOSFET 2P-CH 20V 4.2A 1212-8

Vervaardiger Deel nommer

SI7911DN-T1-GE3

Interne Deel nommer

AX-SI7911DN-T1-GE3

vervaardiger

Vishay Siliconix

Kort beskrywing

MOSFET 2P-CH 20V 4.2A 1212-8

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

32578 Pieces

verwysingsprys

~~USD 0~~

Ons prys

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AX Semiconductor het SI7911DN-T1-GE3 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir SI7911DN-T1-GE3

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : SI7911DN-T1-GE3

vervaardiger : Vishay Siliconix

beskrywing : MOSFET 2P-CH 20V 4.2A 1212-8

reeks : TrenchFET®

Deelstatus : Obsolete

VOO-tipe : 2 P-Channel (Dual)

VOO-funksie : Logic Level Gate

Dreineer na die bronspanning (Vdss) : 20V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 4.2A

Rds On (Max) @ Id, vgs : 51 mOhm @ 5.7A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 15nC @ 4.5V

Invoerkapasiteit (Ciss) (Max) @ Vds : -

Krag - Maks : 1.3W

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Pakket / saak : PowerPAK® 1212-8 Dual

Verskaffer toestelpakket : PowerPAK® 1212-8 Dual

gewig : -

toestand : Nuut en oorspronklik

dokumente vir SI7911DN-T1-GE3

Inligtingsblaaie : SI7911DN-T1-GE3.pdf

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