RFD12N06RLESM9A - MOSFET N-CH 60V 18A DPAK

Vervaardiger Deel nommer

RFD12N06RLESM9A

Interne Deel nommer

AX-RFD12N06RLESM9A

vervaardiger

ON Semiconductor

Kort beskrywing

MOSFET N-CH 60V 18A DPAK

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

1146685 Pieces

verwysingsprys

~~USD 0.244674~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het RFD12N06RLESM9A in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir RFD12N06RLESM9A

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : RFD12N06RLESM9A

vervaardiger : ON Semiconductor

beskrywing : MOSFET N-CH 60V 18A DPAK

reeks : UltraFET™

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 60V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 18A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 63 mOhm @ 18A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 15nC @ 10V

Vgs (maksimum) : ±16V

Invoerkapasiteit (Ciss) (Max) @ Vds : 485pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 49W (Tc)

Werkstemperatuur : -55°C ~ 175°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : TO-252AA

Pakket / saak : TO-252-3, DPak (2 Leads + Tab), SC-63

gewig : -

toestand : Nuut en oorspronklik

dokumente vir RFD12N06RLESM9A

Inligtingsblaaie : RFD12N06RLESM9A.pdf

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