IPT60R150G7XTMA1 - MOSFET N-CH 650V 17A HSOF-8

Vervaardiger Deel nommer

IPT60R150G7XTMA1

Interne Deel nommer

AX-IPT60R150G7XTMA1

vervaardiger

Infineon Technologies

Kort beskrywing

MOSFET N-CH 650V 17A HSOF-8

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

246390 Pieces

verwysingsprys

~~USD 1.138686~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het IPT60R150G7XTMA1 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir IPT60R150G7XTMA1

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : IPT60R150G7XTMA1

vervaardiger : Infineon Technologies

beskrywing : MOSFET N-CH 650V 17A HSOF-8

reeks : CoolMOS™ G7

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 650V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 17A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 150 mOhm @ 5.3A, 10V

Vgs (th) (Max) @ Id : 4V @ 260µA

Heklading (Vg) (Maks) @ Vgs : 23nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 902pF @ 400V

VOO-funksie : -

Kragdissipasie (maksimum) : 106W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : PG-HSOF-8-2

Pakket / saak : 8-PowerSFN

gewig : -

toestand : Nuut en oorspronklik

dokumente vir IPT60R150G7XTMA1

Inligtingsblaaie : IPT60R150G7XTMA1.pdf

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