SSM6J212FE,LF - MOSFET P-CH 20V 4A ES6

Vervaardiger Deel nommer

SSM6J212FE,LF

Interne Deel nommer

AX-SSM6J212FE,LF

vervaardiger

Toshiba Semiconductor and Storage

Kort beskrywing

MOSFET P-CH 20V 4A ES6

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

3016815 Pieces

verwysingsprys

~~USD 0.093~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het SSM6J212FE,LF in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir SSM6J212FE,LF

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : SSM6J212FE,LF

vervaardiger : Toshiba Semiconductor and Storage

beskrywing : MOSFET P-CH 20V 4A ES6

reeks : U-MOSVI

Deelstatus : Active

VOO-tipe : P-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 20V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 4A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 1.5V, 4.5V

Rds On (Max) @ Id, vgs : 40.7 mOhm @ 3A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 1mA

Heklading (Vg) (Maks) @ Vgs : 14.1nC @ 4.5V

Vgs (maksimum) : ±8V

Invoerkapasiteit (Ciss) (Max) @ Vds : 970pF @ 10V

VOO-funksie : -

Kragdissipasie (maksimum) : 500mW (Ta)

Werkstemperatuur : 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : ES6

Pakket / saak : SOT-563, SOT-666

gewig : -

toestand : Nuut en oorspronklik

dokumente vir SSM6J212FE,LF

Inligtingsblaaie : SSM6J212FE,LF.pdf

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