IPD80R1K4CEATMA1 - MOSFET N-CH 800V 3.9A TO252-3

Vervaardiger Deel nommer

IPD80R1K4CEATMA1

Interne Deel nommer

AX-IPD80R1K4CEATMA1

vervaardiger

Infineon Technologies

Kort beskrywing

MOSFET N-CH 800V 3.9A TO252-3

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

850280 Pieces

verwysingsprys

~~USD 0.329964~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het IPD80R1K4CEATMA1 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir IPD80R1K4CEATMA1

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : IPD80R1K4CEATMA1

vervaardiger : Infineon Technologies

beskrywing : MOSFET N-CH 800V 3.9A TO252-3

reeks : CoolMOS™

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 800V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 3.9A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 1.4 Ohm @ 2.3A, 10V

Vgs (th) (Max) @ Id : 3.9V @ 240µA

Heklading (Vg) (Maks) @ Vgs : 23nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 570pF @ 100V

VOO-funksie : -

Kragdissipasie (maksimum) : 63W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : PG-TO252-3

Pakket / saak : TO-252-3, DPak (2 Leads + Tab), SC-63

gewig : -

toestand : Nuut en oorspronklik

dokumente vir IPD80R1K4CEATMA1

Inligtingsblaaie : IPD80R1K4CEATMA1.pdf

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