DMN10H220LVT-13 - MOSFET N-CH 100V 1.87A TSOT26

Vervaardiger Deel nommer

DMN10H220LVT-13

Interne Deel nommer

AX-DMN10H220LVT-13

vervaardiger

Diodes Incorporated

Kort beskrywing

MOSFET N-CH 100V 1.87A TSOT26

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

2312590 Pieces

verwysingsprys

~~USD 0.12132~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het DMN10H220LVT-13 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir DMN10H220LVT-13

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : DMN10H220LVT-13

vervaardiger : Diodes Incorporated

beskrywing : MOSFET N-CH 100V 1.87A TSOT26

reeks : -

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 100V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 1.87A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 220 mOhm @ 1.6A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 8.3nC @ 10V

Vgs (maksimum) : ±16V

Invoerkapasiteit (Ciss) (Max) @ Vds : 401pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 1.67W (Ta)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : TSOT-26

Pakket / saak : SOT-23-6 Thin, TSOT-23-6

gewig : -

toestand : Nuut en oorspronklik

dokumente vir DMN10H220LVT-13

Inligtingsblaaie : DMN10H220LVT-13.pdf

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