C3M0120090D - 900V 120 MOHM G3 SIC MOSFET
Vervaardiger Deel nommer
Interne Deel nommer
AX-C3M0120090D
vervaardiger
Kort beskrywing
900V 120 MOHM G3 SIC MOSFET
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
69270 Pieces
verwysingsprys
Ons prys
- (Kontak ons gerus vir 'n beter prys: [email protected])
- AX Semiconductor het C3M0120090D in voorraad vir verkoop.
- Gestuur opsies en gestuur tyd:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betaal opsies:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasies vir C3M0120090D
gehalte waarborg :
365 dae waarborg
Stock Resource :
Franchise verspreider / Vervaardiger Direkte
Land van oorsprong :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer :
C3M0120090D
vervaardiger :
Cree/Wolfspeed
beskrywing :
900V 120 MOHM G3 SIC MOSFET
reeks :
C3M™
Deelstatus :
Active
VOO-tipe :
N-Channel
tegnologie :
SiCFET (Silicon Carbide)
Dreineer na die bronspanning (Vdss) :
900V
Stroom - Deurlopende dreinering (id) @ 25 ° C :
23A (Tc)
Aandrywing Spanning (Max Rds On, Min Rds On) :
15V
Rds On (Max) @ Id, vgs :
155 mOhm @ 15A, 15V
Vgs (th) (Max) @ Id :
3.5V @ 3mA
Heklading (Vg) (Maks) @ Vgs :
17.3nC @ 15V
Vgs (maksimum) :
+18V, -8V
Invoerkapasiteit (Ciss) (Max) @ Vds :
350pF @ 600V
VOO-funksie :
-
Kragdissipasie (maksimum) :
97W (Tc)
Werkstemperatuur :
-55°C ~ 150°C (TJ)
Monteringstipe :
Through Hole
Verskaffer toestelpakket :
TO-247-3
Pakket / saak :
TO-247-3
gewig :
-
toestand :
Nuut en oorspronklik
dokumente vir C3M0120090D
Inligtingsblaaie :
C3M0120090D.pdf
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