DMG7N65SJ3 - MOSFET BVDSS 501V 650V TO251

Vervaardiger Deel nommer
Interne Deel nommer
vervaardiger
Kort beskrywing
MOSFET BVDSS 501V 650V TO251
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
485195 Pieces
verwysingsprys
USD 0.578238
Ons prys
- (Kontak ons ​​gerus vir 'n beter prys: [email protected])

AX Semiconductor het DMG7N65SJ3 in voorraad vir verkoop.
Gestuur opsies en gestuur tyd:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betaal opsies:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasies vir DMG7N65SJ3

gehalte waarborg : 365 dae waarborg
Stock Resource : Franchise verspreider / Vervaardiger Direkte
Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer : DMG7N65SJ3
vervaardiger : Diodes Incorporated
beskrywing : MOSFET BVDSS 501V 650V TO251
reeks : Automotive, AEC-Q101
Deelstatus : Active
VOO-tipe : N-Channel
tegnologie : MOSFET (Metal Oxide)
Dreineer na die bronspanning (Vdss) : 650V
Stroom - Deurlopende dreinering (id) @ 25 ° C : 5.5A (Tc)
Aandrywing Spanning (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, vgs : 1.4 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Heklading (Vg) (Maks) @ Vgs : 25nC @ 10V
Vgs (maksimum) : ±30V
Invoerkapasiteit (Ciss) (Max) @ Vds : 886pF @ 50V
VOO-funksie : -
Kragdissipasie (maksimum) : 125W (Tc)
Werkstemperatuur : -55°C ~ 150°C (TJ)
Monteringstipe : Through Hole
Verskaffer toestelpakket : TO-251
Pakket / saak : TO-251-3, IPak, Short Leads
gewig : -
toestand : Nuut en oorspronklik
Related Links : DMG , DMG7N

dokumente vir DMG7N65SJ3

Inligtingsblaaie : DMG7N65SJ3.pdf

Verwante produkte vir DMG7N65SJ3 Diodes Incorporated

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