SI2308BDS-T1-GE3 - MOSFET N-CH 60V 2.3A SOT23-3

Vervaardiger Deel nommer
Interne Deel nommer
vervaardiger
Kort beskrywing
MOSFET N-CH 60V 2.3A SOT23-3
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
2570395 Pieces
verwysingsprys
USD 0.109152
Ons prys
- (Kontak ons ​​gerus vir 'n beter prys: [email protected])

AX Semiconductor het SI2308BDS-T1-GE3 in voorraad vir verkoop.
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Normal Post: 10-15 days.
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spesifikasies vir SI2308BDS-T1-GE3

gehalte waarborg : 365 dae waarborg
Stock Resource : Franchise verspreider / Vervaardiger Direkte
Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer : SI2308BDS-T1-GE3
vervaardiger : Vishay Siliconix
beskrywing : MOSFET N-CH 60V 2.3A SOT23-3
reeks : TrenchFET®
Deelstatus : Active
VOO-tipe : N-Channel
tegnologie : MOSFET (Metal Oxide)
Dreineer na die bronspanning (Vdss) : 60V
Stroom - Deurlopende dreinering (id) @ 25 ° C : 2.3A (Tc)
Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, vgs : 156 mOhm @ 1.9A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Heklading (Vg) (Maks) @ Vgs : 6.8nC @ 10V
Vgs (maksimum) : ±20V
Invoerkapasiteit (Ciss) (Max) @ Vds : 190pF @ 30V
VOO-funksie : -
Kragdissipasie (maksimum) : 1.09W (Ta), 1.66W (Tc)
Werkstemperatuur : -55°C ~ 150°C (TJ)
Monteringstipe : Surface Mount
Verskaffer toestelpakket : SOT-23-3 (TO-236)
Pakket / saak : TO-236-3, SC-59, SOT-23-3
gewig : -
toestand : Nuut en oorspronklik
Related Links : SI230 , SI2308BD

dokumente vir SI2308BDS-T1-GE3

Inligtingsblaaie : SI2308BDS-T1-GE3.pdf

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