IRF6662TR1PBF - MOSFET N-CH 100V 8.3A DIRECTFET

Vervaardiger Deel nommer

IRF6662TR1PBF

Interne Deel nommer

AX-IRF6662TR1PBF

vervaardiger

Infineon Technologies

Kort beskrywing

MOSFET N-CH 100V 8.3A DIRECTFET

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

8999 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het IRF6662TR1PBF in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir IRF6662TR1PBF

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : IRF6662TR1PBF

vervaardiger : Infineon Technologies

beskrywing : MOSFET N-CH 100V 8.3A DIRECTFET

reeks : HEXFET®

Deelstatus : Obsolete

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 100V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 8.3A (Ta), 47A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 22 mOhm @ 8.2A, 10V

Vgs (th) (Max) @ Id : 4.9V @ 100µA

Heklading (Vg) (Maks) @ Vgs : 31nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 1360pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 2.8W (Ta), 89W (Tc)

Werkstemperatuur : -40°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : DIRECTFET™ MZ

Pakket / saak : DirectFET™ Isometric MZ

gewig : -

toestand : Nuut en oorspronklik

dokumente vir IRF6662TR1PBF

Inligtingsblaaie : IRF6662TR1PBF.pdf

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