SIB412DK-T1-GE3 - MOSFET N-CH 20V 9A SC75-6
Vervaardiger Deel nommer
Interne Deel nommer
vervaardiger
Kort beskrywing
MOSFET N-CH 20V 9A SC75-6
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
6664 Pieces
verwysingsprys
Ons prys
- (Kontak ons gerus vir 'n beter prys: [email protected])
- AX Semiconductor het SIB412DK-T1-GE3 in voorraad vir verkoop.
- Gestuur opsies en gestuur tyd:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betaal opsies:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasies vir SIB412DK-T1-GE3
gehalte waarborg :
365 dae waarborg
Stock Resource :
Franchise verspreider / Vervaardiger Direkte
Land van oorsprong :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer :
SIB412DK-T1-GE3
vervaardiger :
Vishay Siliconix
beskrywing :
MOSFET N-CH 20V 9A SC75-6
reeks :
TrenchFET®
Deelstatus :
Obsolete
VOO-tipe :
N-Channel
tegnologie :
MOSFET (Metal Oxide)
Dreineer na die bronspanning (Vdss) :
20V
Stroom - Deurlopende dreinering (id) @ 25 ° C :
9A (Tc)
Aandrywing Spanning (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, vgs :
34 mOhm @ 6.6A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Heklading (Vg) (Maks) @ Vgs :
10.16nC @ 5V
Vgs (maksimum) :
±8V
Invoerkapasiteit (Ciss) (Max) @ Vds :
535pF @ 10V
VOO-funksie :
-
Kragdissipasie (maksimum) :
2.4W (Ta), 13W (Tc)
Werkstemperatuur :
-55°C ~ 150°C (TJ)
Monteringstipe :
Surface Mount
Verskaffer toestelpakket :
PowerPAK® SC-75-6L Single
Pakket / saak :
PowerPAK® SC-75-6L
gewig :
-
toestand :
Nuut en oorspronklik
dokumente vir SIB412DK-T1-GE3
Inligtingsblaaie :
SIB412DK-T1-GE3.pdf
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