TPN1R603PL,L1Q - X35 PB-F POWER MOSFET TRANSISTOR
Vervaardiger Deel nommer
Interne Deel nommer
vervaardiger
Kort beskrywing
X35 PB-F POWER MOSFET TRANSISTOR
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
888305 Pieces
verwysingsprys
Ons prys
- (Kontak ons gerus vir 'n beter prys: [email protected])
- AX Semiconductor het TPN1R603PL,L1Q in voorraad vir verkoop.
- Gestuur opsies en gestuur tyd:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betaal opsies:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasies vir TPN1R603PL,L1Q
gehalte waarborg :
365 dae waarborg
Stock Resource :
Franchise verspreider / Vervaardiger Direkte
Land van oorsprong :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer :
TPN1R603PL,L1Q
vervaardiger :
Toshiba Semiconductor and Storage
beskrywing :
X35 PB-F POWER MOSFET TRANSISTOR
reeks :
U-MOSIX-H
Deelstatus :
Active
VOO-tipe :
N-Channel
tegnologie :
MOSFET (Metal Oxide)
Dreineer na die bronspanning (Vdss) :
30V
Stroom - Deurlopende dreinering (id) @ 25 ° C :
80A (Tc)
Aandrywing Spanning (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
1.6 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 300µA
Heklading (Vg) (Maks) @ Vgs :
41nC @ 10V
Vgs (maksimum) :
±20V
Invoerkapasiteit (Ciss) (Max) @ Vds :
3900pF @ 15V
VOO-funksie :
-
Kragdissipasie (maksimum) :
104W (Tc)
Werkstemperatuur :
175°C
Monteringstipe :
Surface Mount
Verskaffer toestelpakket :
8-TSON Advance (3.3x3.3)
Pakket / saak :
8-PowerVDFN
gewig :
-
toestand :
Nuut en oorspronklik
dokumente vir TPN1R603PL,L1Q
Inligtingsblaaie :
TPN1R603PL,L1Q.pdf
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