PMFPB8032XP,115 - MOSFET P-CH 20V 2.7A HUSON6

Vervaardiger Deel nommer

PMFPB8032XP,115

Interne Deel nommer

AX-PMFPB8032XP,115

vervaardiger

Nexperia USA Inc.

Kort beskrywing

MOSFET P-CH 20V 2.7A HUSON6

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

1584030 Pieces

verwysingsprys

~~USD 0.17712~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het PMFPB8032XP,115 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir PMFPB8032XP,115

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : PMFPB8032XP,115

vervaardiger : Nexperia USA Inc.

beskrywing : MOSFET P-CH 20V 2.7A HUSON6

reeks : -

Deelstatus : Active

VOO-tipe : P-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 20V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 2.7A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V

Rds On (Max) @ Id, vgs : 102 mOhm @ 2.7A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 8.6nC @ 4.5V

Vgs (maksimum) : ±12V

Invoerkapasiteit (Ciss) (Max) @ Vds : 550pF @ 10V

VOO-funksie : Schottky Diode (Isolated)

Kragdissipasie (maksimum) : 485mW (Ta), 6.25W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : 6-HUSON-EP (2x2)

Pakket / saak : 6-UDFN Exposed Pad

gewig : -

toestand : Nuut en oorspronklik

dokumente vir PMFPB8032XP,115

Inligtingsblaaie : PMFPB8032XP,115.pdf

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