SPI11N60C3XKSA1 - MOSFET N-CH 650V 11A TO-262

Vervaardiger Deel nommer

SPI11N60C3XKSA1

Interne Deel nommer

AX-SPI11N60C3XKSA1

vervaardiger

Infineon Technologies

Kort beskrywing

MOSFET N-CH 650V 11A TO-262

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

65815 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het SPI11N60C3XKSA1 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir SPI11N60C3XKSA1

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : SPI11N60C3XKSA1

vervaardiger : Infineon Technologies

beskrywing : MOSFET N-CH 650V 11A TO-262

reeks : CoolMOS™

Deelstatus : Obsolete

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 650V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 11A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 380 mOhm @ 7A, 10V

Vgs (th) (Max) @ Id : 3.9V @ 500µA

Heklading (Vg) (Maks) @ Vgs : 60nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 1200pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 125W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Through Hole

Verskaffer toestelpakket : PG-TO262-3-1

Pakket / saak : TO-262-3 Long Leads, I²Pak, TO-262AA

gewig : -

toestand : Nuut en oorspronklik

dokumente vir SPI11N60C3XKSA1

Inligtingsblaaie : SPI11N60C3XKSA1.pdf

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