TK12V60W,LVQ - MOSFET N CH 600V 11.5A 5DFN

Vervaardiger Deel nommer

TK12V60W,LVQ

Interne Deel nommer

AX-TK12V60W,LVQ

vervaardiger

Toshiba Semiconductor and Storage

Kort beskrywing

MOSFET N CH 600V 11.5A 5DFN

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

19664 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het TK12V60W,LVQ in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir TK12V60W,LVQ

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : TK12V60W,LVQ

vervaardiger : Toshiba Semiconductor and Storage

beskrywing : MOSFET N CH 600V 11.5A 5DFN

reeks : DTMOSIV

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 600V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 11.5A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 300 mOhm @ 5.8A, 10V

Vgs (th) (Max) @ Id : 3.7V @ 600µA

Heklading (Vg) (Maks) @ Vgs : 25nC @ 10V

Vgs (maksimum) : ±30V

Invoerkapasiteit (Ciss) (Max) @ Vds : 890pF @ 300V

VOO-funksie : Super Junction

Kragdissipasie (maksimum) : 104W (Tc)

Werkstemperatuur : 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : 4-DFN-EP (8x8)

Pakket / saak : 4-VSFN Exposed Pad

gewig : -

toestand : Nuut en oorspronklik

dokumente vir TK12V60W,LVQ

Inligtingsblaaie : TK12V60W,LVQ.pdf

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