SIS888DN-T1-GE3 - MOSFET N-CH 150V 20.2A 1212-8S

Vervaardiger Deel nommer

SIS888DN-T1-GE3

Interne Deel nommer

AX-SIS888DN-T1-GE3

vervaardiger

Vishay Siliconix

Kort beskrywing

MOSFET N-CH 150V 20.2A 1212-8S

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

603435 Pieces

verwysingsprys

~~USD 0.46494~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het SIS888DN-T1-GE3 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir SIS888DN-T1-GE3

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : SIS888DN-T1-GE3

vervaardiger : Vishay Siliconix

beskrywing : MOSFET N-CH 150V 20.2A 1212-8S

reeks : ThunderFET®

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 150V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 20.2A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 7.5V, 10V

Rds On (Max) @ Id, vgs : 58 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 4.2V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 14.5nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 420pF @ 75V

VOO-funksie : -

Kragdissipasie (maksimum) : 52W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TA)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : PowerPAK® 1212-8S (3.3x3.3)

Pakket / saak : PowerPAK® 1212-8S

gewig : -

toestand : Nuut en oorspronklik

dokumente vir SIS888DN-T1-GE3

Inligtingsblaaie : SIS888DN-T1-GE3.pdf

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