SI4200DY-T1-GE3 - MOSFET 2N-CH 25V 8A 8SOIC
Vervaardiger Deel nommer
Interne Deel nommer
vervaardiger
Kort beskrywing
MOSFET 2N-CH 25V 8A 8SOIC
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
1839160 Pieces
verwysingsprys
Ons prys
- (Kontak ons gerus vir 'n beter prys: [email protected])
- AX Semiconductor het SI4200DY-T1-GE3 in voorraad vir verkoop.
- Gestuur opsies en gestuur tyd:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Betaal opsies:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
spesifikasies vir SI4200DY-T1-GE3
gehalte waarborg :
365 dae waarborg
Stock Resource :
Franchise verspreider / Vervaardiger Direkte
Land van oorsprong :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer :
SI4200DY-T1-GE3
vervaardiger :
Vishay Siliconix
beskrywing :
MOSFET 2N-CH 25V 8A 8SOIC
reeks :
TrenchFET®
Deelstatus :
Obsolete
VOO-tipe :
2 N-Channel (Dual)
VOO-funksie :
Logic Level Gate
Dreineer na die bronspanning (Vdss) :
25V
Stroom - Deurlopende dreinering (id) @ 25 ° C :
8A
Rds On (Max) @ Id, vgs :
25 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Heklading (Vg) (Maks) @ Vgs :
12nC @ 10V
Invoerkapasiteit (Ciss) (Max) @ Vds :
415pF @ 13V
Krag - Maks :
2.8W
Werkstemperatuur :
-55°C ~ 150°C (TJ)
Monteringstipe :
Surface Mount
Pakket / saak :
8-SOIC (0.154", 3.90mm Width)
Verskaffer toestelpakket :
8-SO
gewig :
-
toestand :
Nuut en oorspronklik
dokumente vir SI4200DY-T1-GE3
Inligtingsblaaie :
SI4200DY-T1-GE3.pdf
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