IRF6798MTRPBF - MOSFET N-CH 25V 37A DIRECTFET-MX

Vervaardiger Deel nommer

IRF6798MTRPBF

Interne Deel nommer

AX-IRF6798MTRPBF

vervaardiger

Infineon Technologies

Kort beskrywing

MOSFET N-CH 25V 37A DIRECTFET-MX

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

10336 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het IRF6798MTRPBF in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir IRF6798MTRPBF

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : IRF6798MTRPBF

vervaardiger : Infineon Technologies

beskrywing : MOSFET N-CH 25V 37A DIRECTFET-MX

reeks : HEXFET®

Deelstatus : Obsolete

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 25V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 37A (Ta), 197A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 1.3 mOhm @ 37A, 10V

Vgs (th) (Max) @ Id : 2.35V @ 150µA

Heklading (Vg) (Maks) @ Vgs : 75nC @ 4.5V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 6560pF @ 13V

VOO-funksie : Schottky Diode (Body)

Kragdissipasie (maksimum) : 2.8W (Ta), 78W (Tc)

Werkstemperatuur : -40°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : DIRECTFET™ MX

Pakket / saak : DirectFET™ Isometric MX

gewig : -

toestand : Nuut en oorspronklik

dokumente vir IRF6798MTRPBF

Inligtingsblaaie : IRF6798MTRPBF.pdf

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