FQD12N20LTM-F085 - MOSFET N-CH 200V 9A DPAK

Vervaardiger Deel nommer

FQD12N20LTM-F085

Interne Deel nommer

AX-FQD12N20LTM-F085

vervaardiger

ON Semiconductor

Kort beskrywing

MOSFET N-CH 200V 9A DPAK

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

489940 Pieces

verwysingsprys

~~USD 0.572646~~

Ons prys

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AX Semiconductor het FQD12N20LTM-F085 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir FQD12N20LTM-F085

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : FQD12N20LTM-F085

vervaardiger : ON Semiconductor

beskrywing : MOSFET N-CH 200V 9A DPAK

reeks : Automotive, AEC-Q101, QFET®

Deelstatus : Not For New Designs

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 200V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 9A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 5V, 10V

Rds On (Max) @ Id, vgs : 280 mOhm @ 4.5A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 21nC @ 5V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 1080pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 2.5W (Ta), 55W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : D-Pak

Pakket / saak : TO-252-3, DPak (2 Leads + Tab), SC-63

gewig : -

toestand : Nuut en oorspronklik

dokumente vir FQD12N20LTM-F085

Inligtingsblaaie : FQD12N20LTM-F085.pdf

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