JAN1N5809US - DIODE GEN PURP 100V 6A B-MELF

Vervaardiger Deel nommer
Interne Deel nommer
vervaardiger
Kort beskrywing
DIODE GEN PURP 100V 6A B-MELF
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
53292 Pieces
verwysingsprys
USD 6.31686
Ons prys
- (Kontak ons ​​gerus vir 'n beter prys: [email protected])

AX Semiconductor het JAN1N5809US in voorraad vir verkoop.
Gestuur opsies en gestuur tyd:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Betaal opsies:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

spesifikasies vir JAN1N5809US

gehalte waarborg : 365 dae waarborg
Stock Resource : Franchise verspreider / Vervaardiger Direkte
Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer : JAN1N5809US
vervaardiger : Microsemi Corporation
beskrywing : DIODE GEN PURP 100V 6A B-MELF
reeks : Military, MIL-PRF-19500/477
Deelstatus : Active
Diode tipe : Standard
Spanning - DC Reverse (Vr) (Max) : 100V
Huidige - Gemiddelde gelyk (Io) : 6A
Spanning - vorentoe (Vf) (Max) @ As : 875mV @ 4A
spoed : Fast Recovery =< 500ns, > 200mA (Io)
Omgekeerde hersteltyd (trr) : 30ns
Stroom - omgekeerde lekkasie @ Vr : 5µA @ 100V
Kapasiteit @ Vr, F : 60pF @ 10V, 1MHz
Monteringstipe : Surface Mount
Pakket / saak : SQ-MELF, B
Verskaffer toestelpakket : B, SQ-MELF
Bedryfstemperatuur - aansluiting : -65°C ~ 175°C
gewig : -
toestand : Nuut en oorspronklik
Related Links : JAN , JAN1N

dokumente vir JAN1N5809US

Inligtingsblaaie : JAN1N5809US.pdf

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