APTM120DA30CT1G - MOSFET N-CH 1200V 31A SP1

Vervaardiger Deel nommer

APTM120DA30CT1G

Interne Deel nommer

AX-APTM120DA30CT1G

vervaardiger

Microsemi Corporation

Kort beskrywing

MOSFET N-CH 1200V 31A SP1

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

17864 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het APTM120DA30CT1G in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir APTM120DA30CT1G

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : APTM120DA30CT1G

vervaardiger : Microsemi Corporation

beskrywing : MOSFET N-CH 1200V 31A SP1

reeks : POWER MOS 8™

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 1200V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 31A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 360 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 5V @ 2.5mA

Heklading (Vg) (Maks) @ Vgs : 560nC @ 10V

Vgs (maksimum) : ±30V

Invoerkapasiteit (Ciss) (Max) @ Vds : 14560pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 657W (Tc)

Werkstemperatuur : -40°C ~ 150°C (TJ)

Monteringstipe : Chassis Mount

Verskaffer toestelpakket : SP1

Pakket / saak : SP1

gewig : -

toestand : Nuut en oorspronklik

dokumente vir APTM120DA30CT1G

Inligtingsblaaie : APTM120DA30CT1G.pdf

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