TK65G10N1,RQ - MOSFET N-CH 100V 65A D2PAK

Vervaardiger Deel nommer

TK65G10N1,RQ

Interne Deel nommer

AX-TK65G10N1,RQ

vervaardiger

Toshiba Semiconductor and Storage

Kort beskrywing

MOSFET N-CH 100V 65A D2PAK

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

359515 Pieces

verwysingsprys

~~USD 0.78039~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het TK65G10N1,RQ in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir TK65G10N1,RQ

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : TK65G10N1,RQ

vervaardiger : Toshiba Semiconductor and Storage

beskrywing : MOSFET N-CH 100V 65A D2PAK

reeks : U-MOSVIII-H

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 100V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 65A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 4.5 mOhm @ 32.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Heklading (Vg) (Maks) @ Vgs : 81nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 5400pF @ 50V

VOO-funksie : -

Kragdissipasie (maksimum) : 156W (Tc)

Werkstemperatuur : 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : D2PAK

Pakket / saak : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

gewig : -

toestand : Nuut en oorspronklik

dokumente vir TK65G10N1,RQ

Inligtingsblaaie : TK65G10N1,RQ.pdf

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