BSP315P-E6327 - MOSFET P-CH 60V 1.17A SOT-223

Vervaardiger Deel nommer

BSP315P-E6327

Interne Deel nommer

AX-BSP315P-E6327

vervaardiger

Infineon Technologies

Kort beskrywing

MOSFET P-CH 60V 1.17A SOT-223

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

65645 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het BSP315P-E6327 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir BSP315P-E6327

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : BSP315P-E6327

vervaardiger : Infineon Technologies

beskrywing : MOSFET P-CH 60V 1.17A SOT-223

reeks : SIPMOS®

Deelstatus : Obsolete

VOO-tipe : P-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 60V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 1.17A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 800 mOhm @ 1.17A, 10V

Vgs (th) (Max) @ Id : 2V @ 160µA

Heklading (Vg) (Maks) @ Vgs : 7.8nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 160pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 1.8W (Ta)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : PG-SOT223-4

Pakket / saak : TO-261-4, TO-261AA

gewig : -

toestand : Nuut en oorspronklik

dokumente vir BSP315P-E6327

Inligtingsblaaie : BSP315P-E6327.pdf

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