FQD9N25TM-F080 - MOSFET N-CH 250V 7.4A DPAK

Vervaardiger Deel nommer

FQD9N25TM-F080

Interne Deel nommer

AX-FQD9N25TM-F080

vervaardiger

ON Semiconductor

Kort beskrywing

MOSFET N-CH 250V 7.4A DPAK

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

766370 Pieces

verwysingsprys

~~USD 0.36609~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het FQD9N25TM-F080 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir FQD9N25TM-F080

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : FQD9N25TM-F080

vervaardiger : ON Semiconductor

beskrywing : MOSFET N-CH 250V 7.4A DPAK

reeks : QFET®

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 250V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 7.4A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 420 mOhm @ 3.7A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 20nC @ 10V

Vgs (maksimum) : ±30V

Invoerkapasiteit (Ciss) (Max) @ Vds : 700pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 2.5W (Ta), 55W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : D-Pak

Pakket / saak : TO-252-3, DPak (2 Leads + Tab), SC-63

gewig : -

toestand : Nuut en oorspronklik

dokumente vir FQD9N25TM-F080

Inligtingsblaaie : FQD9N25TM-F080.pdf

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