DMN2320UFB4-7B - MOSFET N-CH 20V X2-DFN1006-3

Vervaardiger Deel nommer

DMN2320UFB4-7B

Interne Deel nommer

AX-DMN2320UFB4-7B

vervaardiger

Diodes Incorporated

Kort beskrywing

MOSFET N-CH 20V X2-DFN1006-3

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

3148860 Pieces

verwysingsprys

~~USD 0.0891~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het DMN2320UFB4-7B in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir DMN2320UFB4-7B

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : DMN2320UFB4-7B

vervaardiger : Diodes Incorporated

beskrywing : MOSFET N-CH 20V X2-DFN1006-3

reeks : -

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 20V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 1A (Ta)

Aandrywing Spanning (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, vgs : 320 mOhm @ 500mA, 4.5V

Vgs (th) (Max) @ Id : 950mV @ 250µA

Heklading (Vg) (Maks) @ Vgs : 0.89nC @ 4.5V

Vgs (maksimum) : ±8V

Invoerkapasiteit (Ciss) (Max) @ Vds : 71pF @ 10V

VOO-funksie : -

Kragdissipasie (maksimum) : 520mW (Ta)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : X2-DFN1006-3

Pakket / saak : 3-XFDFN

gewig : -

toestand : Nuut en oorspronklik

dokumente vir DMN2320UFB4-7B

Inligtingsblaaie : DMN2320UFB4-7B.pdf

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