NP33N06YDG-E1-AY - MOSFET N-CH 60V 33A 8HSON

Vervaardiger Deel nommer

NP33N06YDG-E1-AY

Interne Deel nommer

AX-NP33N06YDG-E1-AY

vervaardiger

Renesas Electronics America

Kort beskrywing

MOSFET N-CH 60V 33A 8HSON

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

66710 Pieces

verwysingsprys

~~USD 0~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het NP33N06YDG-E1-AY in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir NP33N06YDG-E1-AY

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : NP33N06YDG-E1-AY

vervaardiger : Renesas Electronics America

beskrywing : MOSFET N-CH 60V 33A 8HSON

reeks : -

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 60V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 33A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 5V, 10V

Rds On (Max) @ Id, vgs : 14 mOhm @ 16.5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 78nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 3900pF @ 25V

VOO-funksie : -

Kragdissipasie (maksimum) : 1W (Ta), 97W (Tc)

Werkstemperatuur : 175°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : 8-HSON

Pakket / saak : 8-SMD, Flat Lead Exposed Pad

gewig : -

toestand : Nuut en oorspronklik

dokumente vir NP33N06YDG-E1-AY

Inligtingsblaaie : NP33N06YDG-E1-AY.pdf

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