SI2312BDS-T1-E3 - MOSFET N-CH 20V 3.9A SOT23-3

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Interne Deel nommer
vervaardiger
Kort beskrywing
MOSFET N-CH 20V 3.9A SOT23-3
RoHS Status
Loodvrye / RoHS Compliant
Afleweringstyd
1-2 dae
beskikbare hoeveelheid
2648880 Pieces
verwysingsprys
USD 0.105918
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AX Semiconductor het SI2312BDS-T1-E3 in voorraad vir verkoop.
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spesifikasies vir SI2312BDS-T1-E3

gehalte waarborg : 365 dae waarborg
Stock Resource : Franchise verspreider / Vervaardiger Direkte
Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Onderdeel nommer : SI2312BDS-T1-E3
vervaardiger : Vishay Siliconix
beskrywing : MOSFET N-CH 20V 3.9A SOT23-3
reeks : TrenchFET®
Deelstatus : Active
VOO-tipe : N-Channel
tegnologie : MOSFET (Metal Oxide)
Dreineer na die bronspanning (Vdss) : 20V
Stroom - Deurlopende dreinering (id) @ 25 ° C : 3.9A (Ta)
Aandrywing Spanning (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, vgs : 31 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id : 850mV @ 250µA
Heklading (Vg) (Maks) @ Vgs : 12nC @ 4.5V
Vgs (maksimum) : ±8V
Invoerkapasiteit (Ciss) (Max) @ Vds : -
VOO-funksie : -
Kragdissipasie (maksimum) : 750mW (Ta)
Werkstemperatuur : -55°C ~ 150°C (TJ)
Monteringstipe : Surface Mount
Verskaffer toestelpakket : SOT-23-3 (TO-236)
Pakket / saak : TO-236-3, SC-59, SOT-23-3
gewig : -
toestand : Nuut en oorspronklik
Related Links : SI231 , SI2312B

dokumente vir SI2312BDS-T1-E3

Inligtingsblaaie : SI2312BDS-T1-E3.pdf

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